场效应MOS管AK55P15参数-15A-55V封装TO-220.pdf免费

AK55P15 AK P-Channel Enhancement Mode Power MOSFET Description The AK55P15 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● V =-55V,I =-15A DS D RDS(ON) 75mΩ @ VGS=-10V Schematic diagram ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Excellent package for good heat dissipation Application ● Power switching application ● Hard switched and high frequency circuits ● DC-DC converter 100% UIS TESTED! 100% ∆Vds TESTED! Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity AK55P15 NCE55P15 TO-220-3L - - - Absolute Maximum Ratings (T =25℃unless otherwise noted) C Parameter Symbol Limit Unit Drain-Source Voltage VDS -55 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID -15 A Drain Current-Continuous(T =100℃) I (100℃) -10 A C D Pulsed Drain Current