场效应MOS管AK60P20F参数-20A-60V封装TO-220F.pdf免费

AK60P20F AK P-Channel Enhancement Mode Power MOSFET Description The AK60P20F uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● V =-60V,I =-20A DS D RDS(ON) 42mΩ @ VGS=-10V ● High density cell design for ultra low Rdson Schematic diagram ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply 100% UIS TESTED! Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity AK60P20F AK60P20F TO-220F - - - Absolute Maximum Ratings (T =25℃unless otherwise noted) C Parameter Symbol Limit Unit Drain-Source Voltage VDS -60 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID -20 A Drain Current-Continuous(T =100℃) I (100℃) -14.1 A C D Pulsed Drain Current