AK1003 SOT23-3L广东奥科半导体.pdf免费

AK1003 SOT23-3L N-Channel Enhancement MOSFET 3 Features ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current 2 ● Excellent package for good heat dissipation 1. Gate 2. Source 1 3. Drain Application ● Power switching application ■Simplified outline(SOT23-3L) ● Hard switched and high frequency circuits D ● Uninterruptible power supply Description G The KF1003 uses advanced trench technology and S design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protected. VDSS RDS(ON) ID @ 10V (typ) 100V 135mΩ 5 A Absolute Maximum Ratings Ta = 25 Parameter