场效应MOS管AKBSS123K参数0.17A100V封装SOT-23.pdf免费

AKBSS123K AK N-Channel Enhancement Mode Power MOSFET General Features ● V = 100 V,I = 0.17A DS D RDS(ON) 7.2Ω @ VGS=10V RDS(ON) 8Ω @ VGS=4.5V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Schematic diagram ● ESD 2KV HBM Application ●Direct logic-level interface: TTL/CMOS ●Drivers: relays, solenoids, lamps, hammers,display, memories, transistors, etc. ●Battery operated systems ●Solid-state relays Package Marking And Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity B123K Ẋ AKBSS123K SOT-23 Ø180mm 8 mm 3000 units Absolute Maximum Ratings (T =25℃unless otherwise noted) A Parameter Symbol Limit Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V TA =25 ℃ 0.17 Continuous Drain Current (T =150 ℃) I A J D T =100 ℃ 0.12 A Drain Current-Pulsed (Note 1)