SD103AX SOD-523
Schottky Barrier Diode
FEATURES
Low forward voltage drop.
Guard ring construction for transient protection.
Low reverse recovery time.
1.Cathode 2.Anode
Low reverse capacitance.
■Simplified outline(SOD-523)
APPLICATIONS Top View
Schottky barrier application.
■Marking
Marking S4
MAXIMUM RATING @ Ta=25°C unless otherwise specified
Parameter Symbol Limits Unit
DC Reverse voltage VR 40 V
Continuous forward current IF 350 mA
Repetitive peak forward current @t≤1.0s IFRM 1 A
Total power dissipation Ptot 400 mW
Total resistance junction to ambient RθJA 300 ℃/W
Junction temperature Tj 125 ℃
Storage temperature Tstg -65-125 ℃
ELECTRICAL CHARACTERISTICS @ Ta=25°C unless otherwise specified
Parameter Symbol Min. Typ. Max. Unit Conditions
Reverse breakdown voltage V 40 V I =100μA
(BR)R
您可能关注的文档
- 场效应MOS管AK60H10参数100A60V封装TO-220.pdf
- 场效应MOS管AK60H15A参数150A60V封装TO-220.pdf
- 场效应MOS管AK60H15参数150A60V封装TO-220.pdf
- 场效应MOS管AK60P20参数-20A-60V封装TO-220.pdf
- 场效应MOS管AK60P25参数-25A-60V封装TO-220.pdf
- 场效应MOS管AK60P35参数-35A-60V封装TO-220.pdf
- 场效应MOS管AK60P40参数-40A-60V封装TO-220.pdf
- 场效应MOS管AK60P50参数-50A-60V封装TO-220.pdf
- 场效应MOS管AK60P82A参数-82A-60V封装TO-220.pdf
- 场效应MOS管AK7578参数78A75V封装TO-220.pdf
原创力文档

文档评论(0)