TSA12L100 DO-27
Trench MOS Barrier Schottky Rectifier
Reverse Voltage - 100 V
Forward Current - 12 A
FEATURES
Advanced trench technology
Low forward voltage drop
Low power losses
High efficiency operation
Lead free in comply with EU RoHS 2011/65/EU directives
MECHANICAL DATA
Case: DO-201AD/DO-27
Terminals: Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.98g / 0.0345oz
DO-201AD/DO-27
Maximum Ratings (Per Leg) at Ta=25°C unless otherwise specified
Parameter Symbols Value Units
Maximum Repetitive Peak Reverse Voltage VRRM 100 V
Maximum RMS voltage VRMS 100 V
Maximum DC Blocking Voltage VDC 100 V
Maximum Average Forward Rectified Current Per diode IF(AV) 12 A
Peak Forward Surge Current, 8.3ms Single Half Sine-wave
IFSM 200 A
superimposed on rated load per diode
Operating Temperature Range TJ -55 ~ +150 °C
Storage Temperature Range TSTG -55 ~ +150 °C
Typical Thermal Resistance Per diode(munted on
您可能关注的文档
- 广东奥科半导体GBJ601-GBJ602-GBJ604-GBJ606-GBJ608-GBJ610-GBJ.pdf
- 广东奥科半导体GBJ5001G-GBJ5002G-GBJ5004G-GBJ5006G-GBJ5008G-GBJ5010G-GBJ.pdf
- 广东奥科半导体GBJ3501G-GBJ3502G-GBJ3504G-GBJ3506G-GBJ3508G-GBJ3510G-GBJ.pdf
- 场效应MOS管AK01H14T参数140A100V封装TO-247.pdf
- 广东奥科半导体GBJ3501-GBJ3502-GBJ3504-GBJ3506-GBJ3508-GBJ3510-GBJ.pdf
- 广东奥科半导体GBJ2501-GBJ2502-GBJ2504-GBJ2506-GBJ2508-GBJ2510-GBJ.pdf
- 广东奥科半导体GBJ2001G-GBJ2002G-GBJ2004G-GBJ2006G-GBJ2008G-GBJ2010G-GBJ.pdf
- 场效应MOS管AK01H21TC参数210A100V封装TO-247.pdf
- 广东奥科半导体GBJ1501G-GBJ1502G-GBJ1504G-GBJ1506G-GBJ1508G-GBJ.pdf
- 广东奥科半导体GBJ2001-GBJ2002-GBJ2004-GBJ2006-GBJ2008-GBJ2010-GBJ.pdf
最近下载
- 湖北襄阳宜城市千和百货店(烟花爆竹零售店)重大事故案例培训稿.docx VIP
- 基本建设工程竣工财务决算审核报告模板.docx VIP
- 国际商务礼仪(新形态一体化教材) 商务宴请礼仪 第四章 商务宴请礼仪20181211.pptx VIP
- DBJ41∕T 255-2021 分片预制混凝土装配式综合管廊结构技术标准.pdf
- 国际商务礼仪(新形态一体化教材) 商务交往礼仪 第三章 商务交往礼仪20181211.pptx VIP
- 广西武宣县盘龙铅锌矿剖析.PDF VIP
- 集中供热管网热损失实测分析.pdf VIP
- TCIAPS 0025-2023电池行业能效对标实施指南第2部分电池产品.pdf VIP
- 北京中医药大学中西医结合内科学2016年考博真题试卷.pdf VIP
- 《国际商务礼仪》课件 第二章 商务会议礼仪.pptx VIP
原创力文档

文档评论(0)