富士igbt模块应用手册--外文翻译.docxVIP

附录A Fuji IGBT Modules Application Manual Power converters, such as variable-speed motor drives and uninterruptible power supplies for computers, were revolutionized with the introduction of bipolar power tr ansistor modules and power MOSFETs. The demand for compact, lightweight, and ef ficient power converters has consequently also promoted the rapid development of t hese switching devices. Bipolar transistor modules and MOSFETs however, cannot fully satisfy the demands of these power converters. For example, while bipolar power transistor modules can withstand high voltages and ontrol large currents, their switch -ing speed is rather slow. Conversely, power MOSFETs switch fast, but have a low wi th stand voltage and current capacity. Therefore, to satisfy these requirements, the insulated gate bipolar transistor (IG BT) was developed.The IGBT is a switching device designed to have the high-sp eed switching performance and gate voltage control of a power MOSFET as well as the high-voltage / large-current handling capacity of a bipolar transistor. Compares the basic structure of an IGBT and a power MOSFET.The IGBT is characterized by a p+-layer added to the drain side of the power MOSFET structure.It is this p+-layer that enables the various IGBT features explained in this manual. As shown in Fig.1-2,the ideal IGBT equivalent circuit is a monolithic Bi-MOS transistor in which a pnp bipolar transistor and a power MOSFET are darlington connected.Applying a positive voltage between the gate and the emitter,awitches on the MOSFET and produce a low resistance effect between the base and the collector of pnp transistor,thereby switching it on. When the applied votage between the gaate and the emitter is set to”0” This means that an IGBT can be switched on and off using voltage signals in the same way as a power MOSFET. Like the power MOSFET, a positive voltage between the gate and the emitter produces a current flow through the IGBT, switching it on. When the IGBT is on,