微电子电路microelectroniccircuit标准课件sedra著作.pptxVIP

1;Figure 14.1 Collector current waveforms for transistors operating in (a) class A, (b) class B,;Figure 14.1 (Continued) (c) class AB, and (d) class C amplifier stages.;Figure 14.2 An emitter follower (Q1) biased with a constant current I supplied by transistor Q2.;Figure 14.3 Transfer characteristic of the emitter follower in Fig. 14.2. This linear characteristic is obtained by neglecting the change in vBE1 with iL. The maximum positive output is determined by the saturation of Q1. In the negative direction, the limit of the linear region is determined either by Q1 turning off or by Q2 saturating, depending on the values of I and RL.;Figure 14.4 Maximum signal waveforms in the class A output stage of Fig. 14.2 under the condition I = VCC /RL or, equivalently, RL = VCC /I.;Figure 14.5 A class B output stage.;Figure 14.6 Transfer characteristic for the class B output stage in Fig. 14.5.;Figure 14.7 Illustrating how the dead band in the class B transfer characteristic results in crossover distortion.;Figure 14.8 Power dissipation of the class B output stage versus amplitude of the output sinusoid.;Figure 14.9 Class B circuit with an op amp connected in a negative-feedback loop to reduce crossover distortion.;Figure 14.10 Class B output stage operated with a single power supply.;Figure 14.11 Class AB output stage. A bias voltage VBB is applied between the bases of QN and QP, giving rise to a bias current IQ given by Eq. (14.23). Thus, for small vI, both transistors conduct and crossover distortion is almost completely eliminated.;Figure 14.12 Transfer characteristic of the class AB stage in Fig. 14.11.;Figure 14.13 Determining the small-signal output resistance of the class AB circuit of Fig. 14.11.;Figure 14.14 A class AB output stage utilizing diodes for biasing. If the junction area of the output devices, QN and QP, is n times that of the biasing devices D1 and D2, and a quiescent current IQ = nIBIAS flows in the output devices.;Figure 14.15 A class