晶体缺陷作业.docVIP

晶体缺陷作业 晶体缺陷作业 PAGE 晶体缺陷作业 1 什么叫肖特基缺陷和弗兰克耳缺陷？用Kroger-Vink记号分别描述AgBr中的弗兰克耳缺陷和MgO中的肖特基缺陷形成的缺陷化学方程，写出ZnO中掺杂Al2O3空位补偿和电子补偿的缺陷化学方程。 2 If cupric oxide (CuO) is exposed to reducing atmospheres at elevated temperatures, some of the Cu2+ ions will become Cu+. (a) Under these conditions, name one crystalline defect that you would expect to form in order to maintain charge neutrality. (b) How many Cu+ ions are required for the creation of each defect? (c) How would you express the chemical formula for this nonstoichiometric material? 3 (a) Suppose that Li2O is added as an impurity to CaO. If the Li+ substitutes for Ca2+, what kind of vacancies would you expect to form How many of these vacancies are created for every Li added? (b) Suppose that CaCl2 is added as an impurity to CaO. If the Cl- substitutes for O2-, what kind of vacancies would you expect to form How many of the vacancies are created for every Cl- added? 4 纯铁的空位形成能为atom，将纯铁加热至850℃后激冷至室温20℃,若高温下的空位全部保留，试求过饱和空位浓度与室温平衡空位浓度的比值。 5 已知铜的晶体结构为fcc,点阵常数a=，切变模量，试分别计算柏氏矢量为的位错应变能。 6在图示的Cu晶界上有一双球冠形第二相，已知Cu的大角度晶界能为， (1)分别计算当时Cu与第二相之间的相界面能； (2)讨论它们若处在三个Cu晶粒的交线上将是什么形状。 7 计算并比较体心立方晶体中（100），（110），（111）面的比表面能。设每对原子键能为ε，点阵常数为a。