《半导体工艺》课件ch06-ion implantation翻译版.pptVIP

Yue Shen Ions penetrate into substrate 离子注入基体 Collide with lattice atoms 与晶格原子碰撞 Gradually lose their energy and stop 逐渐失去能量，最终停止 Two stop mechanisms 两个阻止机制 Nuclear stopping （核阻止） Collision with nuclei of the lattice atoms 与晶格原子的原子核碰撞 Scattered significantly 大角度散射 Causes crystal structure damage. 造成晶格损伤 electronic stopping（电子阻止） Collision with electrons of the lattice atoms 与晶格原子的自由电子与束缚电子碰撞 Incident ion path is almost unchanged 注入离子的路径基本不变 Energy transfer is very small 能量损失很小 Crystal structure damage is negligible 晶体结构的损伤可以忽略 The total stopping power（总阻止本领） Stotal = Sn + Se Sn: nuclear stopping（核阻止本领） Se: electronic stopping（电子阻止本领） Low E, high A ion implantation: mainly nuclear stopping 低能离子注入，主要是核阻止 High E, low A ion implantation, electronic stopping mechanism is more important 高能离子注入，电子阻止机制更重要 Why don’t people use channeling effect to create deep junction without high ion energy? 为什么不利用沟道效应在离子能量不高的情况产生深结？ Implanted ions transfer energy to lattice atoms 注入离子将能量转移到晶格原子 Atoms to break free 产生自由原子 Freed atoms collide with other lattice atoms 自由原子与其他晶格原子碰撞 Free more lattice atoms 使更多的晶格原子成为自由原子 Damage continues until all freed atoms stop 知道所有自由原子均停止下来，损伤才停止 One energetic ion can cause thousands of displacements of lattice atoms 一个高能离子可以引起数千个晶格原子位移 Why can’t the furnace temperature be ramped-up and cooled-down as quickly as RTP system ? 高温炉的温度为什么不能像RTP系统那样快速升温和降温？ Ions Atomic or molecule weight 离子 原子或分子量 10B 10 11B 11 10BF 29 11BF 30 F2 38 10BF2 48 11BF2 49 Implanted ions charge wafer positively 注入离子使晶片表面带正电 Cause wafer charging effect 造成晶片充电效应 Expel positive ion, cause beam blowup and result non-uniform dopant distribution 排斥正离子，引起离子束弯曲，造成不均匀杂志分布 Discharge arcing create defects on wafer 电弧放电引起晶片表面损伤 Breakdown gate oxide, low yield 使栅氧化层击穿，降低工艺成品率 Need eliminate or minimize charging effect 需要消除或减弱充电效应 Need to provide electrons to neutralize ions 需要提供电子中和正离子 Plasma flooding system