《半导体工艺》课件ch09-etching.pptVIP

Yue Shen Etching Patterned Material Selectivity is Important!! Un-patterned Etching Dry Etch （干蚀刻） An-isotropic各向异性 dy/dt:dx/dt:6 Gas Phase Reaction with volatile products 含挥发性产物的气相反应 Frequent use of very reactive species in a Plasma 在等离子体中频繁使用活性物质 Si Etch SiO2 Etch Metal Etch Wet Etch=Dissolution湿蚀刻 Isotropic dy/dt:dx/dt:1.2 Si Etch Strong HF SiO2 Etch Strong NH4OH not NaOH (Na ion is bad) Si3N4 Etch Phosphoric Acid Metal Etch Acid Solution (HNO3) Photoresist Solvent H2SO4 Solution x y Etching Wet and Dry Etch have very different chemical reactions! Wet and Dry Etch have similar rate determining steps Mass Transfer Limiting Surface Reaction Limiting Similar mathematics Dissolution of Layer-Wet Etch BL-Mass Transfer A(l)+b B(s)?? ABb(l) A= Acid for metal (B) dissolution redox reaction Base for SiO2 (B) dissolution Solvent for photoresist (B) dissolution Etch Reactions Boundary Layer Mass Transfer Surface Chemical Reaction Like Catalytic reaction Product diffusion away from surface Reactant Concentration Profile Product Concentration Profile Dissolution Rate/Time Depends on Mass Transfer Diffusion Coefficient Velocity along wafer surface Size of wafer Solubility Density of film being etched Wet Etch Reaction Wafers in Carriage Placed in Etch Solution How Long?? Boundary Layer MT is Rate Determining Flow over a leading edge for MT Derivation Mathcad solution Also a ?C for the Concentration profile Dry Etch Physical Evaporation Not typically used Heating chip diffuses dopants out of position Sputtering from a target Plasma reactor with volatile reaction product Why Dry Etching? RF Plasma Sputtering for Deposition and for Etching RF + DC field Removal Rate Sputtering Yield, S S=α(E1/2-Eth1/2) Deposition Rate ? Ion current into Target *Sputtering Yield Fundamental Charge Plasma Free Electrons accelerated by a strong electric field Collide with gas molecules and eject e- Collision creates more free electron