RS Components 其他智能设备 晶体管 NGTB40N120IHRWG 使用说明.pdfVIP

NGTB40N120IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Features 40 A, 1200 V • Extremely Efficient Trench with Fieldstop Technology VCEsat = 2.30 V • Low Switching Loss Reduces System Power Dissipation Eoff = 0.95 mJ • Optimized for Low Losses in IH Cooker Application • Reliable and Cost Effective Single Die Solution C • This is a Pb−Free Device Typical Applications • Inductive Heating G • Consumer Appliances • Soft Switching E ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Collector−emitter voltage VCES 1200 V Collector current IC A @ TC = 25°C 80 G TO−247 @ TC = 100°C 40 C E CASE 340AL Pulsed collector current, Tpulse ICM 120 A limited by TJmax , 10 s pulse, VGE = 15 V Diode forward current IF A