RS Components 其他智能设备 晶体管 FGL60N100BNTDTU 使用说明.pdfVIP

F G L 6 0 N IGBT 1 0 0 FGL60N100BNTD B N NPT-Trench IGBT T D General Description Features Trench insulated gate bipolar transistors (IGBTs) with NPT • High Speed Switching technology show outstanding performance in conduction • Low Saturation Voltage : VCE(sat) = 2.5 V @ IC = 60A and switching characteristics as well as