VISHAY TSHA520 Manual说明书用户手册.PDF

TSHA520. VISHAY Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description The TSHA520. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs tech- nology these high intensity emitters feature about 70 % radiant power improvement. 94 8390 Features • Extra high radiant power and radiant intensity • Suitable for high pulse current operation • Standard T-1¾ (∅ 5 mm) package Applications • Angle of half intensity ϕ = ± 12 ° Infrared remote control and free air transmission sys- • Peak wavelength λp = 875 nm tems with high power and long transmission distance • High reliability requirements in combination with PIN photodiodes or • Good spectral matching to Si photodetectors phototransistors. • Lead-free component Because of the reduced radiance absorption in glass at the wavelength of 875 nm, this emitter series is also • Component in accordance to RoHS 2002/95/EC suitable for systems with panes in the transmission and WEEE 2002/96/EC range between emitter and detector. Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Param