半导体工艺课件.pptxVIP

半导体工艺课件.pptx

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Semiconductor Manufacturing Technology -Chap. 1 Introduction;Discussion: Why did you choose this course?;Your Score;TEXTBOOKS;Reference Books;1、History of the Semiconductor Manufacturing Techniques;1.1 Semiconductor Materials;Comparison of the Semiconductors;1.2 Semiconductor Devices;The first transistor;A thyristor;1957;I-V curve of a GaAs Gunn diode;A Floating Gate MOSFET;1970;A one dimensional CCD;1.3 Semiconductor Technology Evolution;1959;NAND gate in CMOS logic;Cross section of two transistors in a CMOS gate (NAND), in an N-well CMOS process;The first microprocessor. Made by Hoff, et al. in 1971. 3mm x 4mm , with 2300 MOSFETs.;2、Development Trend of the Microelectronic Industry;Development stage;Feature Size: The size of the elements on a chip, which is designated by the DRAM half pitch. The smallest feature size is generally smaller than the feature size for a technology generation (technology node). For example, the 180 nm technology generation will have gate lengths smaller than 180 nm.;Development trend:smaller feature size and larger wafer diameter;Clean room;The air entering a cleanroom from outside is filtered to exclude dust, and the air inside is constantly recirculated through high-efficiency particulate air (HEPA) and/or ultra-low penetration air (ULPA) filters to remove internally generated contaminants.;What is the biggest contamination source?;Airborne particulate size;Cleanroom classifications US FED STD 209E cleanroom standards;增加公制单位的 US FED STD 209E cleanroom standards;ISO 14644-1 cleanroom standards;OK! You may work like this!;Before Entering a Cleanroom;Additional Knowledge: PM 2.5;;Ultrapure Water;Purification process;Purification process;中国国家电子超纯水规格 GB/T1146.1-1997;Ultrapure Gas;Most Important Semiconductor Material: Silicon;Screw dislocation;Fabrication of Polycrystalline Si;Growth of Single Crystalline Silicon;Czochralski Method ;Czochralski Method (直拉法);Doping in the Silicon Growth Process; The impurity concentration in the solid

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