电子器件场效应晶体管.pptxVIP

电子器件场效应晶体管第1页/共27页 MOS Structure Poly-silicon-OS StructureIdeal MOS capacitanceReal Surface Effects:Work function differenceinterface chargeNon-ideal capacitance第2页/共27页 (1)work function difference semiconductoroxiden+ polysilicon(多晶硅)?ms=?m-?sn+ poly-n Sin+ poly-p Si第3页/共27页 IdealNon-ideal第4页/共27页 (EFm-EFs)= (q?s-q?m) V=?s-?mVG=VFB(平带电压)= -V= ?m -?s=? ms第5页/共27页 (2) Interface chargeGenerally, there are four types of charges in a practical MOS structure.Mobile ionic charge Qm可动离子电荷Oxide trapped charge Qot氧化物陷阱电荷Oxide fixed charge Qf氧化物固定电荷Interface trap charge Qit界面陷阱电荷第6页/共27页 IdealInterface charge第7页/共27页 Qi第8页/共27页 Effects of real surface 第9页/共27页 6.4.4 Threshold voltageTo achieve the flat bandTo accommodate the depletion chargeTo induce the inverted region第10页/共27页 Qd= -qNaWm (n channel/P-sub)Qd= qNdWm (p channel/N-sub)When is the threshold voltage of p-channel MOSFET greater than 0? How to do?第11页/共27页 第12页/共27页 1）flat band voltage第13页/共27页 2）threshold voltage第14页/共27页 3）depletion mode because VT0第15页/共27页 (4) MOS Capacitor (ideal)Capacitance-voltage characteristics(电容电压特性）CiCsBecause Cs is depending on VG, the overall capacitance becomes voltage dependent.第16页/共27页 Ci CsTo measure the capacitance, we must superpose the small a-c signal to the voltage. That is VG=V+dVG.Here dVG used to measure the capacitance will cause the small charge change of the MOS capacitorHigh frequency第17页/共27页 第18页/共27页 6.4.5 MOS capacitance-voltage analysisVT~Substrate Doping TypeC-VG Performance~ Substrate Doping TypeTo measure the doping density of substrateTo measure the interface state To measure the mobile charge within the oxide第19页/共27页 (1) To measure the width of oxide layer, doping density of substrate, VFB and VT Fig.6-16To measure the capacitance, we must superpose the small a-c signal to the voltage. That is VG=V+dVG.Here dVG used to measure the capacitance will cause the small charge change of the MOS capacitor第20页/共27页