IPP037N08N3 G INFINEON 英飞凌芯片 中文版规格书手册.pdfVIP

IPP037N08N3 G IPI037N08N3 G IPB035N08N3 G ™ OptiMOS 3 Power-Transistor Product Summary Features V DS 80 V • Ideal for high frequency switching and sync. rec. R DS(on),max 3.5 mΩ • Optimized technology for DC/DC converters I D 100 A • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance RDS(on) • N-channel, normal level • 100% avalanche tested • Pb-free plating; RoHS compliant • Qualified according to JEDEC1) for target applications • Halogen-free according to IEC61249-2-21 Type IPP037N08N3 G IPI037N08N3 G IPB035N08N3 G Package PG-TO220-3 PG-TO262-3 PG-TO263-3 Marking 037N08N 037N08N 035N08N Maximum ratings, at Tj =25 °C, unless otherwise specified Parameter Symbol Conditions Value Unit Continuous drain current I D T C=25 °C2) 100 A T C=100 °C 100 Pulsed drain current2) I D,pulse T C=25 °C