IPB083N10N3 G INFINEON 英飞凌芯片 中文版规格书手册.pdfVIP

IPP086N10N3 G IPI086N10N3 G IPB083N10N3 G IPD082N10N3 G ™ OptiMOS 3 Power-Transistor Product Summary Features VDS 100 V • N-channel, normal level RDS(on),max (TO 252) 8.2 mW • Excellent gate charge x R DS(on) product (FOM) ID 80 A • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant 1) • Qualified according to JEDEC for target application • Ideal for high-frequency switching and synchronous rectification • Halogen-free according to IEC61249-2-21 Type IPP086N10N3 G IPI086N10N3 G IPB083N10N3 G IPD082N10N3 G Package PG-TO220-3 PG-TO262-3 PG-TO263-3 PG-TO252-3 Marking 086N10N 086N10N 083N10N 082N10N Maximum ratings, at T =25 °C, unless otherwise specified j Parameter Symbol Conditions Value Unit Continuous drain current I D TC=25 °C2) 80 A TC=100 °C 58 Pulsed drain current2)