IPD12CN10N G INFINEON 英飞凌芯片 中文版规格书手册.pdfVIP

IPB12CN10N G IPD12CN10N G IPI12CN10N G IPP12CN10N G ™ OptiMOS 2 Power-Transistor Product Summary Features VDS 100 V • N-channel, normal level RDS(on),max (TO252) 12.4 mW • Excellent gate charge x R DS(on) product (FOM) ID 67 A • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant 1) • Qualified according to JEDEC for target application • Ideal for high-frequency switching and synchronous rectification • Halogen-free according to IEC61249-2-21 Type IPB12CN10N G IPD12CN10N G IPI12CN10N G IPP12CN10N G Package PG-TO263-3 PG-TO252-3 PG-TO262-3 PG-TO220-3 Marking 12CN10N 12CN10N 12CN10N 12CN10N Maximum ratings, at T =25 °C, unless otherwise specified j Parameter Symbol Conditions Value Unit Continuous drain current I D TC=25 °C 67 A TC=100 °C 48 Pulsed drain current2)