电化学沉积金凸点晶圆级直径和厚度分布.docx

电化学沉积金凸点晶圆级直径和厚度分布 0 index,agie,北产生,8. flip-capt反映了主包装置的current性、丰富性、预响应性和cot。 Electrodeposition of metal depots through a lithographically defined plating mask is the bumping method of choice to meet the requirements of defined bump shape and size The bumping process can be looked as an interaction process of the photoresist with the electrolyte during electroplating in dependence of a series of parameters. In order to collect the information about the interaction and achieve high aspect ratio ECD gold bumps, the geometry size from photoresist to bump at different electroplating parameters and the roughness of its surface were measured. These data provide information about the deviation of photoresist from the lithographic mask and of the electroplated bumps from the photoresist openings. It can result into design rules for the lithography of plating masks of high aspect ratio gold structures. This work is valuable for future IC manufacturing industry. 1 in-co鞣co东南角的spin-co东南角的spin-cowelle-latelith/wolbachite,etizacts.案例见表3 In this experiment, 100 mm silicon wafer with initially sputtered TiW/Au as under bump metallurgy (UBM) was adopted. Novolac positive resist (Micro Chemicals AZ 4562) with the thickness of 40 μm was spin-coated and lithographed to define the following bump, whose dimension as well as pitch is 10 μm. The Au electroplating was done in the RENA fountain plater filled with a sulphite electrolyte (Enthone Microfab Au 660) , and its agitation of bath was 7 l/min. The current density was 3 mA/cm 2 2.1 监基于o法律的laraearr The diameter distribution of photoresist and bump in horizontal and vertical direction changing with electroplating parameters is shown in Fig. 1. It can be seen that the diameter of photoresist openings after lithography got larger and not uniform. Its range was from 15 to 30 μm and the centre was more likely to be larger. The diameter of ECD Au bumps was smaller than that of photoresist because the bump was not plated as high as the p