纳米电子学与纳米加工.pptVIP

2. operation can only be realised in III-V semiconductors at present although recent demon-strations of interband tunnelling in Si /SiGe devices have been demonstrated with peak-to-valley ratios (PVR) of 2.05 and a peak current density of 22 kA/cm 2 [Rommel 1998]. RTDs in SiGe have also been fabricated but with PVRs of 1.2 and current density of 400 A/cm 2 .The preferred system would be Si/SiO 2 RTDs [Klimeck 1997] which would allow CMOS compatible processing and integration of RTDs with CMOS circuits but there are problems with growing single crystal Si between SiO 2 barriers. 第二十九页，共五十页，2022