掺硅类金刚石薄膜研究的中期报告.docxVIP

掺硅类金刚石薄膜研究的中期报告 摘要： 掺硅类金刚石薄膜在机械、电子、光学等领域具有广泛应用。本文旨在介绍掺硅类金刚石薄膜的制备方法及其性质。结合前人的研究，我们使用化学气相沉积法，在不同沉积时间和沉积条件下制备出了不同硅含量的金刚石薄膜。以成膜率、物相组成、表面形貌、硬度及导电性等为评估指标，研究了不同硅含量的薄膜的性能变化。 研究结果表明，硅含量逐渐增加会影响金刚石薄膜的成膜率和表面形貌。随着硅含量的增加，薄膜的晶体结构由多晶向单晶转变，硬度逐渐降低，但电导率却逐渐增加，且薄膜的导电性能可通过控制硅含量进行调节。因此，在制备掺硅类金刚石薄膜时，需权衡不同硅含量对其性能的影响，并根据具体应用需求进行制备。 关键词：掺硅类金刚石薄膜；制备方法；性质分析；硅含量；导电性能 Abstract： Silicon-doped diamond films have a wide range of applications in the fields of mechanics, electronics, and optics. This paper aims to introduce the preparation methods and properties of silicon-doped diamond films. Combined with previous studies, we used chemical vapor deposition method to prepare diamond films with different silicon contents under different deposition time and conditions. Based on the evaluation indicators such as film formation rate, phase composition, surface morphology, hardness, and conductivity, the performance changes of films with different silicon contents were studied. The results show that the increase of silicon content gradually affects the film formation rate and surface morphology of diamond films. With the increase of silicon content, the crystal structure of the film changes from polycrystalline to single crystal, the hardness gradually decreases, but the conductivity gradually increases, and the conductivity of the film can be adjusted by controlling the silicon content. Therefore, when preparing silicon-doped diamond films, it is necessary to balance the influence of different silicon contents on their properties and prepare them according to specific application requirements. Keywords: Silicon-doped diamond film; preparation method; property analysis; silicon content; conductivity.