HIPIMSHIPIMS-大功率脉冲磁控溅射.pptxVIP

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OverviewPresentationHipims+byHauzerWhyHighPowersputtertechnologyHipimsvs.Hipims+Coatings:TiAlN,Cr2NMachineintegrationinFlexicoat?2

Plasmatechnologywithhigh%ofthematerialtobedepositedisionized.Gainingcontroloverstress-Controlmicrostructure/textureTocreatedefectfreecoatingswithgoodadhesion.TomakecoatingsfortoolandtriboapplicationswhichoutperformarcdepositedcoatingsToreducethermalloadofsubstrateToincreasedepositionrateofsputteringprocessWhyHighpowerpulsesputtering?3

CapacitordischargePeakpulsepowersfromkWtoMWLowfrequency(dutycycle)PulseenergyandvoltagecanbedefinedPulseshapeisdeterminedbysystemconfigurationCablingPressureSputteringatmosphereMagnetrondesignConceptbehindHIPIMSTechnology4

HIPIMSPlasmacompositioninArN2SumofAr++Ar+++Ti++Ti+++N++N++=100%RatioofN+toN2+issignificantlyhigherinaHIPIMSdischargethanin(pulsed)DCdischarge.MorereactiveNspecies.5

HIPIMSTiAlNExperimentExperimentoverviewSample :polishedM2HSSTarget :50/50at%AlTiDep.Temp. :450-520oCFilmthickness :2-3μm Fullloadinchamber,ThreefoldrotationSample#EtchingDepositionsourceconfigurationBiasvoltage1SpuHIPIMSTi2DC+1HIPIMS-75V2SpuHIPIMSTi2DC+1HIPIMS-95V3SpuHIPIMSAlTi1DC+2HIPIMS-75V1ArcArcTi2x4CARC-40V2ArcArcTi2x4CARC-70V6

2D1H95HIPIMS-95Vbias2D1H75HIPIMS-75VbiasA70Arc-70VbiasResults-RoughnessAFM30x30μmSignificantimprovementinsurfaceroughness???7

Results-RoughnessRoughnessdata8

Ionenergy???2D1H75VHIPIMS-75V2D1H95HIPIMS-95VResults-MorphologyAFM2x2μmIncreaseinionenergy(higherbias)withconstantionfluxleadstodensificationofcoatingColumnscoalescetoreducenumberofboundariesResputteringoffilmevidentatgrowingsurface9

Results–HardnessandEmodulusHardnessincreaseswithincreasingbiasoradditionofHIPIMSCathodes.NodefinitetrendforEmodulus–possibledifferencesduetochangesinMicrostruc