新疆2025自考[大功率半导体科学]英语二考前冲刺练习题.docxVIP

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新疆2025自考[大功率半导体科学]英语（二）考前冲刺练习题

一、选择题（共10题，每题2分，合计20分）

1.WhatdoesGaNstandforinthecontextofpowersemiconductordevices?

A.GermaniumArsenicNitride

B.GalliumNitride

C.GermaniumNitride

D.GalliumArsenicNitride

2.Whichofthefollowingmaterialsisknownforitshighelectronmobilityandiswidelyusedinhigh-frequencypowerdevices?

A.SiliconCarbide(SiC)

B.GalliumNitride(GaN)

C.IndiumGalliumArsenide(InGaAs)

D.SiliconGermanium(SiGe)

3.Thetermthermalconductivityinpowersemiconductordesignrefersto:

A.Theabilityofamaterialtocond