甘肃2025自考[大功率半导体科学]英语二易错题专练.docxVIP

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甘肃2025自考[大功率半导体科学]英语（二）易错题专练

一、选择题（每题1分，共10题）

1.WhatdoesthetermGaNstandforinthefieldofpowersemiconductordevices?

A.GermaniumAluminumNitride

B.GalliumNitride

C.GalliumAluminumOxide

D.GermaniumNitride

2.WhichofthefollowingisaprimaryadvantageofSiCpowerdevicesoverSidevicesinhigh-temperatureapplications?

A.Lowercost

B.Higherthermalconductivity

C.Simplermanufacturingprocess

D.Betterradiationresistance

3.TheVDMOSFETistypicallyusedinwhichtypeofpowerconversionapplications?

A.DC-DCconverters

B.AC-ACtransformers

C.RFamplifiers

D.Optocouplers

4.Whatisthetypicalbreakdownvoltagerangefora600VSiCMOSFET?

A.200V–400V

B.400V–600V

C.600V–1200V

D.1200V–2000V

5.Thetermlowswitchinglossinpowerdevicesrefersto:

A.Reducedconductionloss

B.Minimalenergylossduringswitchingtransitions

C.Lowerbreakdownvoltage

D.Higherthermalconductivity

6.Whichmaterialiscommonlyusedasaheatsinkinhigh-powerGaNdevices?

A.Aluminumnitride(AlN)

B.Siliconcarbide(SiC)

C.Copper(Cu)

D.Diamond

7.ThegateoxidelayerinpowerMOSFETsisprimarilyresponsiblefor:

A.Highcurrentconduction

B.Insulatingthegatefromthechannel

C.Reducingbreakdownvoltage

D.Enhancingthermalconductivity

8.WhichofthefollowingisakeychallengeindesigningcoolingsystemsforSiCpowermodules?

A.Lowthermalresistance

B.Highthermalconductivity

C.Highcostofmaterials

D.Lowelectricalresistance

9.Thedrain-sourceon-resistance(Rds(on))isacriticalparameterfor:

A.High-frequencyapplications

B.Low-powercircuits

C.High-currentapplications

D.RFsignalprocessing

10.Whatistheprimaryfunctionofagatedriverinpowerelectronics?

A.Toincreasethebreakdownvoltage

B.Tominimizeswitchingloss

C.Toprovidecontrolledgatesignals

D.Toreduceconductionloss

二、填空题（每空1分，共10空）

1.ThecombinationofGaNandSiCisoftenreferredtoasthe_______erainpowe