Ruichips-RU3020H宏盛微优势代理87.pdfVIP

RU3020H

N-ChannelAdvancedPowerMOSFET

MOSFET

FeaturesPinDescription

•30V/12A,

RDS(ON)=9.5(Typ.)@VGS=10V

m



RDS(ON)=15m(Typ.)@VGS=4.5V

•SuperHighDenseCellDesign

•ReliableandRugged

•100%avalanchetested

SOP-8

•LeadFreeandGreenAvailable

Applications

•PowerManagementinNotebook

Computer,andDC-DCConvertersin

NetworkingSystems.

N-ChannelMOSFET

AbsoluteMaximumRatings

SymbolParameterRatingUni

CommonRatings(=25°CUnlessOtherwiseNoted)

A

VDSSDrain-SourceVoltage30

V

VGSSGate-SourceVoltage±20

TJMaximumJunctionTemperature150°C

TSTGStorageTemperatureRange-55to150°C

DiodeContinuousForwardCurrentT=25°CA

SC12

MountedonLargeHeaSink

①

DP300μsPulseDrainCurrentTestedT=25°CA

C48

T=25°C12

C

D