CMP介绍优质精品文档.pptVIP

ChemicalMechanicalPlanarizationJoshuaChien●jmchien@ME107BEngineeringLaboratorySource:RohmHaas

OutlineAdministrative/SchedulingWhatisCMP?WhyuseCMP?OtherPlanarizationTechniquesCMPVariablesCMPConsumablesPadSlurryConditionerRetainingRingHowdoesitwork?IssueswithCMPTheoreticalCMPPreston’sEquationNextweek’slab

3SafetyFirstWewillbeworkingwithKOHKOH,likemostbases,isextremelycorrosivetomostlivingtissue,sodirectcontactwithKOHanditssolutionsshouldbecarefullyavoided.WearoldclothesthatyouwouldntmindhavingholesinifyouhaveaspillorsplashWearlabcoats,safetyglassesrubberglovesandshoesatalltimes

WhatisCMP?tableSlurry(chemical+abrasive)ConditionerHeadPlatenWaferPadChemicalMechanicalPlanarization(Polishing)TypicalProcessConditionsPressure:2to7psiPlaten/Carrierrpm:20to80Slurryflowrate:100to200ml/minTypicalremovalrates:OxideCMP~2800?/minMetalCMP~3500?/min

CMPisNOTLappingLappingCMPNguyen,C.,EE245Lecture10,Fall2007

Multi-million$machine(Nikon)DryinDryout4polishingtablesMax.potentialthroughputof~2,000wafers/dayMachineforourexperiments(GP)Desk-topRDmachineManualloadingOurthroughput:~8wafers/lab

WhyuseCMP?Devicearchitecturesscaleddowntosub-micronscaleIncreasingnumberoflayersSisubstrateSisubstrateLithography:Resolution~DepthofFocusCMPNewplanarizationtechnique

WhyuseCMP?Cont.IntegratedCircuitsNeededformulti-levelinterconnectsandisolationtechniques

Cheung,N.,EE143Lecture18,Fall2005BarrierdepositionDielectricdepositionVialithographyViaEtchTrenchLithographyTrenchEtchStripresistEtchnitrideBarrierdepositionCopperdepositionCopperCMP

WhyuseCMP?Cont.MEMSPlanarmotionMulti-levelstructuresSmoothsurface(NEMS)LinkageArmGearhubIntrusionLinkageArmGearhubNoIntrusion

11OtherPlanarizationTechniquesSource:CornellNanoScaleScienceTechnologyFacility/doc/CMPPrimer.pdf

CMPVariablesPadFiberStructureCondit