微电子技术论文7582485.pdfVIP

IEEETRANSACTIONSONELECTRONDEVICES,VOL.63,NO.11,NOVEMBER20164423

AnalyticalDrainCurrentModelforOrganic

Thin-FilmTransistorsatDifferentTemperatures

ConsideringBothDeepandTailTrapStates

HongyuHe,Member,IEEE,YuanLiu,BinghuiYan,XinnanLin,Member,IEEE,

XuerenZheng,andShengdongZhang

Abstract—Surface-potential-baseddraincurrentmodelisIn[9]and[10],consideringasingleexponentialdistributed

presentedfororganicthin-filmtransistorsconsideringbothdensityofstates(DOS),thesurface-potential-basedmodels

exponentialdeepandtailtrapstatesdensities.Themodelwereproposedandexplainedthedraincurrentatdifferent

isderivedonthebasisoftheassumptionthatthetrapped

carrierconcentrationdominatesPoisson’sequation.Ananalyticaltemperatures.Later,in[11],itwassuggestedthatthemodel

draincurrentexpressionisobtained.TheexpressionisvalidinbasedonthesingleexponentialDOScouldnotfitthepresent

bothsubthresholdandabove-thresholdregimes.Thecalculatedexperimentaldata,andgoodattemptwasdoneconsidering

resultsareverifiedbyavailableexperimentaldataatdifferentbothdeepandtailexponentialDOS.But,thedraincur-

temperatures.rentmodelwaspartitiveinsubthresholdandabove-threshold

IndexTerms—Compactmodel,temperaturecharacteristics,regimes.Recently,in[12],theunifieddraincurrentmodel

thin-filmtransisto