微电子技术论文s10854-016-5300-0.pdfVIP

JMaterSci:MaterElectron(2016)27:11646–11658

DOI10.1007/s10854-016-5300-0

Structural,opticalandelectricalpropertiesofRudopedMoO3

thinfilmsanditsP–NdiodeapplicationbyJNSpyrolysis

technique

1112

M.Balaji•J.Chandrasekaran•M.Raja•S.Rajesh

Received:8May2016/Accepted:1July2016/Publishedonline:8July2016

SpringerScience+BusinessMediaNewYork2016

AbstractWereportthatthejetnebulizerspraycoatingisarecentinvestigations,manytransitionmetaloxidesare

promisingroutetoacquirerutheniumdopedmolybdenumwidelyusedsuchasMoO,WO,ZnOandNiO[1–3].

33

trioxide(RuMoO3)thinfilmsfortheP–NdiodeapplicationatAmongthosematerials,MoO3isawidebandgapn-type

500C.TheinfluenceofRudoping(0,3,6and9wt%)onmaterialwhichisusedinmanyindustrialapplications

structural,optical,dcelectricalconductivityanddiodeprop-becauseofitsstructuralandelectronicproperties.Com-

ertiesofMoO3wasmeasuredbyvarioustechniques.FromthemonlyobservedphasesinMoO3areorthorhombic(a),

X-raydiffractionanalysis,thefilmswerepolycrystallinewithmonoclinic(b)andhexagonal(h),inwhichaphaseis

anorthorhombicstructureofMoO3.Thescanningelectronwidelystudiedasthermodynamicallystableone.Inthea-

microscopeimagesdisplayedthedissimilaritiesofthesub-phase,MoO3isatwo-dimensional(2D)layeredstructure

microsizedplate-likestructure.TheelementsofRu,MoandOthatconsistsofdoublelayersof