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- 约1.41万字
- 约 9页
- 2026-01-30 发布于广东
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HFQ8G02
N+P-Ch20VFastSwitchingMOSFETs
Description
TheHFQ8G02isthehighcelldensitytrenchedN-chandP-chMOSFETs,whichprovide
excellentRDSONandgatechargeformostofthesynchronousbuckconverterapplications.
TheHFQ8G02meettheRoHSandGreenProductrequirementwithfullfunctionreliability
approved.
Features
SuperLowGateChargeExcellentCdV/dteffectdecline
GreenDeviceAvailableAdvancedhighcelldensityTrench
technology
ProductSummary
BVDSSRDSONID
20V12mΩ8A
-20V17mΩ-8A
DFN2020-8LPinConfiguration
DFN2020-8L
19
第页共页
HFQ8G02
N+P-Ch20VFastSwitchingMOSFETs
N-ElectricalCharacteristics
TJ25°C,unlessotherwisenoted
ParameterSymbolConditionMinTypMaxUnit
OFFCharacteristics
Drain-sourcebreakdownvoltageBVV0V,I250µA20--V
DSSGSD
ZerogatevoltagedraincurrentIDSSVDS20V,VGS0V--1µA
Gate-bodyleakageIGSSVDS0V,VGS±12V--±100nA
ONCharacteristics
Gatethresholdvoltage
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