无锡黑锋科技HFD50N10A-B+N+100V+MOS+TO252-3L.pdfVIP

HFD50N10A-B

N-Ch100VFastSwitchingMOSFETs

Description

TheHFD50N10A-BisthehighestperformancetrenchN-chMOSFETswithextremehighcell

density,whichprovideexcellentRDSONandgatechargeformostofthesynchronousbuck

converterapplications.

TheHFD50N10A-BmeettheRoHSandGreenProductrequirement,100%EASguaranteed

withfullfunctionreliabilityapproved.

Features

SuperLowGateChargeExcellentCdv/dteffectdecline

GreenDeviceAvailableAdvancedhighcelldensityTrenchtechnology

ProductSummary

BVDSSRDSONID

100V18mΩ50A

TO252-3LPinConfiguration

D

D

GS

TO252-3L

-1-6/

HFD50N10A-B

N-Ch100VFastSwitchingMOSFETs

ElectricalCharacteristics

TJ25°C,unlessotherwisenoted

SymbolParameterTestConditionMin.Typ.Max.Units

OffCharacteristic

VDrain-SourceBreakdownVoltageV0V,I250μA100--V

(BR)DSSGSD

IDSSZeroGateVoltageDrainCurrentVDS100V,VGS0V,--1.0μA

IGSSGatetoBodyLeakageCurrentVDS0V,VGS±20V--±100nA

OnCharacteristics

VGateTh