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- 2026-01-30 发布于广东
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HFD15N12-A
N-Ch120VFastSwitchingMOSFETs
Description
TheHFD15N12-AisthehighestperformancetrenchN-chMOSFETswithextremehighcell
density,whichprovideexcellentRDSONandgatechargeformostofthesynchronousbuck
converterapplications.
TheHFD15N12-AmeettheRoHSandGreenProductrequirement,100%EASguaranteedwith
fullfunctionreliabilityapproved.
Features
SuperLowGateChargeExcellentCdv/dteffectdecline
GreenDeviceAvailableAdvancedhighcelldensityTrenchtechnology
ProductSummary
BVDSSRDSONID
120V120mΩ15A
TO252-3LPinConfiguration
D
D
GS
TO252-3L
-1-7/
HFD15N12-A
N-Ch120VFastSwitchingMOSFETs
ElectricalCharacteristics
TJ25°C,unlessotherwisenoted
SymbolParameterConditionsMin.Typ.Max.Unit
StaticCharacteristics
V(BR)DSSDrain-SourceBreakdownVoltageVGS0V,ID250µA120--V
lGSSGate-bodyLeakagecurrentVDS0V,VGS±20V--±100nA
TJ25℃--1
ZeroGateVoltage
IDSSVDS120V,VGS0VμA
DrainCurrent
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