无锡黑锋科技HFH8G02+20V+N+P+MOS+SOT23-6.pdfVIP

HFH8G02

20VN+P-ChannelEnhancementModeMOSFET

Description

TheHFH8G02usesadvancedtrenchtechnologytoprovideexcellent,RDS(ON)lowgatecharge

andoperationwithgatevoltagesaslowas2.5V.ThisdeviceissuitableforuseasaBattery

protectionorinotherSwitchingapplication.

Features

VDS20VID8.5A

RDS(ON)20mΩ@VGS4.5V(Type:17mΩ)

VDS-18VID-7.8A

RDS(ON)38mΩ@VGS-4.5V(Type:33mΩ)

Application

BLDC

s

SOT23-6LPinConfiguration

SOT23-6

19

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HFH8G02

20VN+P-ChannelEnhancementModeMOSFET

N-ElectricalCharacteristics

TJ25°C,unlessotherwisenoted

SymbolParameterConditionsMin.Typ.Max.Unit

BVDSSDrain-SourceBreakdownVoltageVGS0V,ID250uA2021V

StaticDrain-SourceVGS4.5V,ID3A1720

RDS(ON)On-Resistance2mΩ

VGS2.5V,ID2A2235

VGS(th)GateThresholdVoltageVGSVDS,ID250uA0.50.751.2V

VDS16V,VGS0V

1

TJ25℃

IDSSDrain-SourceLeakageCurrentuA