无锡黑锋科技HFD3012+N+P+30V+MOS+TO252-4.pdfVIP

HFD3012

N-ChandP-ChFastSwitchingMOSFETS

Description

TheHFD3012isthehighperformancecomplementaryN-chandP-chMOSFETswithhighcell

density,whichprovideexcellentRDSONandgatechargeformostofthesynchronousbuckconverter

applications.

TheHFD3012meettheRoHSandGreenProductrequirement100%EASguaranteedwithfull

functionreliabilityapproved.

Features

GreenDeviceAvailableExcellentCdV/dteffectdecline

100%EASGuaranteedAdvancedhighcelldensityTrenchtechnology

SuperLowGateCharge

ProductSummary

BVDSSRDSONID

30V15mΩ12A

-30V35mΩ-12A

TO252-4PinConfiguration

D1/D2

NP

S1G1S2G2

TO252-4L

19

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HFD3012

N-ChandP-ChFastSwitchingMOSFETS

N-ChannelElectricalCharacteristics

TJ25°C,unlessotherwisenoted

SymbolParameterTestConditionMin.Typ.Max.Units

OffCharacteristic

VDrain-SourceBreakdownVoltageV0V,I250μA30--V

(BR)DSSGSD

IDSSZeroGateVoltageDrainCurrentVDS30V,VGS0V,--1.0μA

IGSSGatetoBodyLeakageCurrent