无锡黑锋科技HFM80N12A-SGT+N+MOS+120V+PDFN5×6-8.pdfVIP

HFM80N12A-SGT

N-Ch120VFastSwitchingMOSFETs

Features

FastSwitching

LowGateChargeandRDS(on)

LowReversetransfercapacitances

Applications

DC-DCconverter

PortableEquipment

Powermanagement

ProductSummary

BVDSSRDSONID

120V7.7mΩ80A

PDFN5X6-8LPinConfiguration

19/

HFM80N12A-SGT

N-Ch120VFastSwitchingMOSFETs

N-ElectricalCharacteristics

TJ25°C,unlessotherwisenoted

SymbolParameterConditionsMin.Typ.Max.Unit

BVDrain-SourceBreakdownVoltageV0V,I250uA120V

DSSGSD

V10V,I120A7.79.5

GSD

RDS(ON)StaticDrain-SourceOn-ResistancemΩ

V4.5V,I10A911

GSD

VGateThresholdVoltageVV,I250uA1.41.82.2V

GS(th)GSDSD

IDSSDrain-SourceLeakageCurrentVDS120V,VGS0V1uA

IGSSGate-SourceLeakageCurrentVGS±20V,VDS0V±100nA

QgTotalGateCharge(4.5V)