微电子技术论文7579228.pdfVIP

4288IEEETRANSACTIONSONELECTRONDEVICES,VOL.63,NO.11,NOVEMBER2016

ModifyingIndium-Tin-OxidebyGasCosputtering

forUseasanInsulatorinResistiveRandom

AccessMemory

Po-HsunChen,Kuan-ChangChang,Member,IEEE,Ting-ChangChang,SeniorMember,IEEE,

Tsung-MingTsai,Member,IEEE,Chih-HungPan,Yu-TingSu,Cheng-HsienWu,Wan-ChingSu,

Chih-ChengYang,Min-ChenChen,Chun-HaoTu,Kai-HuangChen,IkaiLo,Jin-ChengZheng,

andSimonM.Sze,LifeFellow,IEEE

Abstract—Inthispaper,indium-tin-oxide(ITO)wasusedtohavebeenproposedtotrytoreplacetheflashmemory.

actasbothinsulatorandtopelectrodeinresistiverandomaccessAmongnumerouspossiblecandidates,resistiverandomaccess

memory(RRAM)onidenticalbottomsubstrates.Thisisachievedmemory(RRAM)isconsideredasthemostpromisingone

bycosputteringanITOtargetwithnitride(N)oroxygen(O)

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gasastheinsulator;thencappingbyanITOelectrode,suchthatbecauseofitshighdevicedensity,fastswitchingspeed,and

boththerectifierandRRAMcharacteristicscanbeachievedsimplemetal–insulator–metalstructureforintegrationintheIC

beforeandafteraformingprocess,respectively.Incontrast,process[1]–[4].However,theresistiveswitchingmechanism

usingpureITOasaninsulatordoesnotexhibitRRAMbehavior.ofRRAMisstillunderdebate.Theconductingfilament

ToverifytherectifierandRRAMcharacteristics,materialanaly-