微电子技术论文7572927.pdfVIP

4248IEEETRANSACTIONSONELECTRONDEVICES,VOL.63,NO.11,NOVEMBER2016

CalibrationoftheEffectiveTunnelingBandgap

inGaAsSb/InGaAsforImprovedTFET

PerformancePrediction

QuentinSmets,AnneS.Verhulst,SalimElKazzi,DavidGundlach,CurtA.Richter,

AndaMocuta,NadineCollaert,AaronVoon-YewThean,andMarcM.Heyns

Abstract—Theeffectivebandgapforheterojunctionband-

to-bandtunneling(Eg,eff)isacrucialdesignparame-

terforaheterojunctiontunnelingFET(TFET).However,

thereissignificantuncertaintyonEg,eff,especiallyfor

In0.53Ga0.47As/GaAs0.5Sb0.5.Thismakesthepredictionof

TFETperformancedifficult.WecalibrateEg,effbyfabricating

heterojunctionp+/i/n+diodes,comparingthesimulatedandthe

measuredcurrent–voltageandcapacitance–voltagecurves,while

takingEg,effasafittingparameter.Ourcalibrationsignificantly

reducestheuncertaintyonEg,effcomparedwiththerange

foundintheliterature.Thecomparisonwiththepreviouswork

onhighlydopedheterojunctiondiodessuggeststhatdopant-

dependentbandgapnarrowingreducesEg,effandtherefore

significantlyimpactstheperformanceofhighlydopedTFET.

IndexTerms—Band-to-bandtunneling(BTBT),calibration,

Esakidiode,heterojunction,tunnelingfield-effecttransistor

(TFET).

I.INTRODUCTIONFig.1.Manylattice-matchedInxGa1−xAs/GaAs1−ySbyheterojunction

TFETshavebe