微电子技术论文7571111.pdfVIP

IEEETRANSACTIONSONELECTRONDEVICES,VOL.63,NO.11,NOVEMBER20164167

RandomDopantFluctuation-InducedThreshold

VoltageVariation-ImmuneGeFinFETWith

Metal–Interlayer–SemiconductorSource/Drain

ChanghoShin,Jeong-KyuKim,Gwang-SikKim,HyunjaeLee,StudentMember,IEEE,

ChanghwanShin,Member,IEEE,Jong-KookKim,ByungJinCho,SeniorMember,IEEE,

andHyun-YongYu

Abstract—Theimpactofprocess-inducedrandomdopantisnecessarytocontinuethedevelopmentofFinFETsby

fluctuation(RDF)-inducedthresholdvoltage(V)variationon

thincreasingthechannelcarriermobility[2].

theperformanceof7-nmn-typegermanium(Ge)FinFETsInsub-10-nmCMOStechnologies,process-induced

withandwithoutametal–interlayer–semiconductor(MIS)

source/drain(S/D)structureisinvestigatedusing3-DTCADthresholdvoltage(Vth)variation,especiallyrandomdopant

simulations.InordertoreducetheRDF-inducedVvaria-fluctuation(RDF),isaseriousissue,becauseitsignificantly

th

tion,anMISS/Dstructurewithaheavilydopedn-typezincreducestheyieldinintegratedchipsmanufacturing[3],[4].

oxide(ZnO)interlayerisusedintheS/DregionoftheGeAsthetotalchannelvolumeinthedevicedecreases,

FinFET.Thus,withoutperformancedegradation,theGeFinFETRDF-inducedVthva