微电子技术论文7579625.pdfVIP

4546IEEETRANSACTIONSONELECTRONDEVICES,VOL.63,NO.11,NOVEMBER2016

ReductionofNiGe/n-andp-GeSpecificContact

ResistivitybyEnhancedDopantSegregation

inthePresenceofCarbonDuring

NickelGermanidation

NingyuanDuan,JunLuo,GuileiWang,JinbiaoLiu,EddySimoen,ShujuanMao,HenryRadamson,

XiaoleiWang,JunfengLi,WenwuWang,ChaoZhao,andTianchunYe

Abstract—Thisbriefexploresthespecificcontactdopantactivation[7]aswellasthepoorthermalstability

resistivity(ρc)ofNiGe/n-andp-GecontactswithandofNiGefilms.AccordingtotheInternationalTechnology

withoutcarbonpregermanidationimplantation.ItisfoundthatRoadmapforSemiconductors(ITRS)roadmap,theρcvalue

inthepresenceofcarbon,notonlythethermalstabilityof−82

NiGefilmsisimproved,butalsotheρcoftheNiGe/n-andp-Ge1×10-cmonbothn-andp-typesubstratesis

contactsisreducedremarkablyduetoenhancedphosphorusrequiredforaGeCMOStechnology,andaplentyofresearch

(P)andboron(B)dopantsegregation(DS)attheNiGe/Gehavebeenconductedtoreachthistarget[8]–[18].Among

interfaceafternickelgermanidation.At500°Cgermanidationthem,dopantsegregation(DS)attheNiGe/Geinterfacehas

temperature,theρcvaluesarereducedfrom1.1×10−4-cm2beenshowntoreducethespecificcontactresistivityandto

and2.9×10−5-cm2forNiGe/n-andp-Gecontactswithout

carbonto7.3×10−5-cm2and1.4×10−5