电子器件 技术文件COMSOL_SemiconductorModule_v44_16_9.pdfVIP

SemiconductorModule

SemiconductorDeviceSimulationintheCOMSOLMultiphysicsEnvironment

SemiconductorDevices

BipolarTransistorsMOSFETs

JBSDiodes

ProductSuiteCOMSOLVersion4.4

SemiconductorDeviceModelingCapabilities

TransportEquations

•Carrierstatistics

–Maxwell-Boltzmann

–Fermi-Dirac

•Differentdiscretizations∙=−−+−−

+

–FiniteVolumeMethod(FVM)1

=−∙−

–FiniteElementMethod(FEM)

•Possibilitytosolvefor=1∙−

–Electronsandholes

–Majoritycarrieronly

Poissonandcontinuityequations

•Studytypes

–Stationary

–TimeDependent

–SmallSignalAnalysis,FrequencyDomain

CarrierStatistics

•Maxwell-Boltzmann:usedformodeling

non-degeneratematerials,i.e.when

–Forn-typematerials

−

≪−1and/or−≫and/or≪

0

–Forp-typematerials

−

≪−1and/or−≫and/or≪

0

•Fermi-Dirac:usedformodeling

TheFermidistributionsforan-type(AandB)andfor

degeneratematerials,i.e.whenthea