面心立方结构TaN薄膜功率电阻研究.pdfVIP

工艺·技术·应用 面心立方结构 TaN 薄膜功率电阻研究 δ 1 2 代 波 ，倪 经 （1. 西南科技大学 材料科学与工程学院，四川绵阳 621010 ； 2. 西南应用磁学研究所，四川绵阳 621000 ） 摘 要：TaN 薄膜电阻由于具有高的微波承受功率、低的电阻温度系数以及良好的化学稳定性，是目前常 用的功率电阻。在 Ar/N2 混合气氛下，利用直流反应溅射制备了面心立方结构的 TaN 薄膜功率电阻。实验发现， 当Ta/N 原子比在 0.9~1.2 之间时，可以形成比较好的面心立方结构 TaN。其电阻温度系数约为－1.86 ‰/ °C，对 于 6mm （长）×0.3mm （宽）×0.25µm （厚）的薄膜电阻，微波承受功率超过3W ，而Ta 薄膜电阻承受微波功 率小于 2W 。 关键词：功率电阻；TaN 薄膜；承受功率 中图分类号：O484.4 文献标识码：B 文章编号：1001-3830(2010)05-0037-04 Study on Face Centered Cubic TaN Film Power Resistor 1 2 DAI Bo , NI Jing 1. School of Materials Science and Engineering, Southwest University of Science and Technology, Mianyang 621010, China; 2. Southwest Institute of Applied Magnetics, Mianyang 621000, China Abstract: TaN has been frequently used for fabricating power resistor because of its high microwave power endurance, low temperature coefficient of resistance (TCR) and good corrosion resistance. In this study, face centered cubic (fcc) TaN films were fabricated by using DC reactive magnetron sputtering in Ar/N2 mixed gas atmosphere. It was found that when the Ta/N atomic ratio was between 0.9 and 1.2, fcc TaN films were formed and temperature coefficient of resistance (TCR) is as low as －1.86 ‰/°C. The power endurance is beyond 3W while less than 2W for Ta film resistors. Key words: power resistor; TaN film; power endurance 好的化学抗腐蚀性以及大的微波承受功率等