“双线击穿”曲线现象的分析.pdfVIP

第 32 卷 第 2 期 电 子 器 件 Vol. 32 No. 2 Chinese J ournal Of Elect ron Devices 2009 年 4 月 Ap r2009 Analysis of Double2Line Breakdown Phenomenon for Power Transistor with SIPOS Passivation Layer 1 3 1 1 1 2 CA O Yi2j i ang , S H I L i ang2y u , W A N G Zhen2qun , C H EN J i an2chun , L I U X i ao2w ei 1. School of A p plied Sciences , Harbin Universit y of Science and Technology , Harbin 150080 , China; 2. School of A st ronautics , Harbin I nstitute of Technology , Harbin 150001 , China Abstract :In t he test of breakdown voltage of power transistor with SIPOS passivation layer before packa2 ging ,an abnormal curve of breakdown voltage was found , which was a double2line breakdown voltage curve. After eroding each layer of power transistor and testing breakdown voltage , we used SEM to ana2 lyze passivation layer’ s structure and do point2analysis. The result s show t hat high content of oxygen in SIPOS passivation layer can make interface effect and let breakdown voltage fall back. Finally , an interpre2 tation of double2line p henomenon for power transistor wit h SIPOS passivation layer was given by using special equip ment in t he testAt t he same time some advices were p resented to solve t his problem. Key words :power transistor ; breakdown voltage curve ; Semi2Insulating Polycrystalline2Silicon SIPOS ; double2line breakdown ;scanning electron microscope SEM EEACC :2530 SIPOS钝化功率晶体管“双线击穿” 曲线现象的分析 1 3 1 1 1 2 曹一江 ,史良钰 ,王振群 ,陈建春 ,刘晓为 1.哈尔滨理工大学应用科学学院 ,哈尔滨 150080 ;2.哈尔滨工业大学航天学院 ,哈尔滨 150001 摘 要 :测试半绝缘掺氧多晶硅 SIPOS 层钝化的功率晶体管管芯反向击穿电压曲线时 ,出现异常击穿曲线 ??? “双线击穿” 曲线现象。通过对 SIPOS钝化的功率晶体管管芯进行逐层腐蚀 ,再进行反向击穿曲线测试 ,以及扫描电镜对 SIPOS层结构进 行能谱分析 ,结果显示 SIPOS层中氧含量过大 ,从而产生界面效应造成击穿电压回移 ,并解释了在应用特定测试仪器测试时 显示出“双线击穿曲线” 的现象 ,同时提出解决双线击穿曲线现象的方法。 关键词 :功率晶体管 ;反向击穿曲线 ;半绝缘掺氧多晶硅 SIPOS ;双线击穿 ;扫描电镜 中图分类号 :TN306 文献标识码 :A 文章编号 :100529490 2009 0220364204 随着微电子行业和电力电子行业的发展 ,对功 做出符合要求的高压器件。半绝缘掺氧多晶硅 SI2 率半导体器件的要求越来越高 ,也加快对新技术和 POS膜几乎是电中性的 ,基本上克服了 SiO 的这 2 [ 1 ] 新工艺的研究和应用 ,同时对于功率晶体管的可靠 些缺点 ,具有较高的可靠性、 稳定