第二章晶体结构缺陷.docVIP

第二章 晶体结构的缺陷 Chapter 2 The Crystal Structure’s Defects 本章重点及难点 1、点缺陷的平衡浓度公式 2、位错类型的判断及其特征、柏氏矢量的特征 3、位错源、位错的增殖(F-R源、双交滑移机制等)和运动、交割 4、位错的应力场、位错的应变能、线张力等 5、晶界的特性(大、小角度晶界)、孪晶界、相界的类型 Questions for chapter 2 How many types of point defects? What are their effects on diffusion? What are the characteristics of dislocations and Burger’s vector? How to understand the knowledge about dislocation resources and movements? what are the stress field, strain energy and tension forces of dislocations? what are the characteristics of grain boundaries? Metal crystals are never perfect. It is now well understood that they may contain many defects. For all materials, it is necessary to consider the existence of defects and impurities, collectively known as imperfection, as they affect materials properties. In this chapter, we introduce the three basic types of imperfections: point defects, line defects (or dislocations), and surface defects. 原子的不规则排列产生晶体缺陷。晶体缺陷在材料组织控制（如扩散、相变）和性能控制（如材料强化）中具有重要作用。 晶体缺陷：实际晶体中与理想点阵结构发生偏差的区域。 晶体缺陷可分为以下三类: 点缺陷：在三维空间各方向上尺寸都很小的缺陷。如空位、间隙原子、异类原子等。 线缺陷：在两个方向上尺寸很小，而另一个方向上尺寸较大的缺陷。主要是位错。 面缺陷：在一个方向上尺寸很小，在另外两个方向上尺寸较大的缺陷。如晶界、相界、表面等。 2-1 点缺陷 Section 2.1 Point Defects 1 点缺陷的类型 the types of point defects 空位：VACANCIES These are classified according to a few important types. One of the most important is called a vacancy. The existence of vacancies in crystals was originally postulated to explain solid-state diffusion in crystals. 肖脱基空位(a Schottky defect)－离位原子进入其它空位或迁移至晶界或表面。 弗兰克尔空位(a Frenkel defect)－离位原子进入晶体间隙。 间隙原子：INTERSTITIAL ATOMS An interstitial defect is formed when an extra atom or ion is inserted into the crystal structure at a normally unoccupied position. Interstitial atoms or ions, although much smaller than the atoms or ions located at the lattice points, are still larger than the interstitial sites that they occupy, consequently, the surrounding crystal region is compressed and distorted. 位于晶体点阵间隙的原子。 置换原子：SUBSTITUTIONAL ATOMS A substitutional defect is i