GaInAsSb红外探测器的器件与物理研究.pdfVIP

同时S原子又与更表面的S原子形成S-S键，钝化后的外延片表面形成硫单质， 钝化效果稳定。硫钝化后，有效地消除了GaInAsSb表面悬挂键，减小了表面 态，使表面复合速度减小，从而改善了探测器的反向特性和探测率。90天后 测量，器件的IV特性和探测率并没有明显变化，说明钝化效果稳定。 4、研究了GaInAsSb探测器单层增透膜的生长，测量结果表明生长增透膜后可以 使探测率有20-400%左右的提高，器件的I-V曲线基本上没有变化。其中器件 生长Si0后，效果最好，器件的黑体探测率可以提高40%左右。在生长增透膜 时要求生长在2000C以下，当生长温度大于2000C时，器件的I-V特性变差， 器件受到破坏。 5、研究了GaInAsSb红外探测器前置放大器的设计，通过分析低噪声放大器的设 计理论，研制了用分立晶体管搭建的前置放大器，同时也研制了用集成运放 工CL7650建立的放大电路，经过测试这两种放大电路都可以比较好的工作。 关键词:Ga工nAsSb，红外探测器，欧姆接触，合金化，探测率，硫钝化 增透膜，放大器 Abstract ThebandgapenergyofIII-VcompoundsemiconductorGaInAsSballoyrangs fromO.leVto1.42eVwhichcoversthreeimportantinrfaredwavebandsof1-3pm, 3-5gm,8-12pm.GalnAsSballoy,whoselatticeismatchedtoGaSbsubstratewith wavelengthintherangeof1.7-4.3pm,areofgreatinterestsforuseasmid-infrared photodetectorsoperatingatroomtemperature.Thematerilisimportantininfrared imaging,pollutionmonitoring,industrialprocesscontrolandfuturefibre communication.GaInAsSbinrfareddetectorsarenovelcompounddetectorswith advantagesoffastresponse,highsensitivity,highstability,lowprice,especiallyits charactertoworkatroomtemperature Thedevicetectmologyisstudiedandthedeviceperformanceisimprovedinthis dissertation.Majorcontentsandresultsofthestudyareabstractedasfollowing: ThedarkcurrentofPIN GaInAsSbinrfareddetectorsissimulated.ThePSPICE modelofdetectorissetup.Simulatedresultscoincidedwithtestedresults.trap assistedtunnelingcurrentdominateddarkcurrentofthedeviceswhenthe reversevoltagewaslargerthan0.35VCalculationshowthatthedefectsinthe surfaceofdevicehavegreateffectonthereversecharacteristicsofGaInAsSb infrareddetectors. 2.Theomhniccontactandtheamnealingconditionofp-typeGaInAsSbandn-type GaSbcompoundsemiconductorsarestudiedandthesamplesareanalysedwith SEM andXRD.Testresultsshow thatTiPtAuandAuZnonGaInAsSbhave becomeomhniccontact.OmhniccontactofTiPtAuissmallerandstablerthan thatofAuZn.AuGeNionN-typeGaS