基于TANNER和SIPOS钝化的功率管终端CAD研究与应用论文.doc

摘  要  鉴于终端设计在功率晶体管设计中的重要地位，本文主要对目前广泛应用的 终端结构的研究，探讨它们的优缺点。结合本公司特有的半绝缘掺氧多晶硅 （SIPOS）表面钝化膜层，通过实验对比测试的方法，优选出适合本公司掺氧多晶 硅钝化结构的理想终端设计结构，形成统一的设计规则。 本文的工作共进行了三个阶段的试验，采用 TANNER 计算机辅助设计软件， 每次都在一块光刻掩膜版上同时制作多种结构进行对比，通过实际流片、在线测 试以及产出后测试，特别是部分重复试验和提高标准后的测试，成功地解决了目 前生产中遇到的一些产品比如型号为 4**2 等的三角双线、4**8 等的高温打火以及 成品三极管高温储存后参数变化率等特有的问题，找到了一些较理想的适合于掺 氧多晶硅钝化的终端结构，在提升产品性能，提高产品可靠性方面起到了关键的 作用。在场限环的设计中研究了“宽深比”对 BVcbo 反压大小的重要影响，对 BVcbo 反压大小影响的原因作了初步解释，最终通过实验给出了优化的“宽深比”，为以 后进一步研究提供参考。 关键词： 终端结构，掺氧多晶硅，场限环，TANNER CAD I ABSTRACT Due to the important position of termination design in power transistor design, the termination structure applied widely was studied, and its advantage and defect were compared. We develop proper terminal structure suitable to the film of SIPOS(semi-insulating poly silicon by experimental and theoretical), which is a special technology in our company. Then, we have obtaied an unified design rule. There are three stage experiments in the thesis. The various design patterns which designed with TANNER CAD are made on the same mask in every experiment so as to compare conveniently in the same process condition. Through online and finally tests, one of the new project has successfully resolved the triangle and double-line curve problems of breakdown voltage in product 4**2 、 blazing problem during high temperature test in product 4**8, and the parameter change problem of final product in high temperature storage for long time. A perfect termination structure which improves function and enhances reliability of the products is developed. The thesis also indicates the important influence of the ratio of “width/depth” in FLR(Field Limited Ring) design on the breakdown voltage Bvcbo, and shows the accordingly causes. The study also gives the optimal ratio by experiment, which will be a reference for further research.  Keywords:  Termination structure，SIPOS，FLR，TANNER CAD II 目  录  第一章  引言 .........................................................................................