DY掺杂对SR2BI4TI5O18样品介电性能的影响.docVIP

Dy掺杂对Sr2Bi4Ti5O18样品介电性能的影响 徐 锐 (江苏南京，南京市上元中学，211100) 摘要：采用固相烧结工艺制备了Sr2Bi4－xDyxTi5O18 (x = 0, 0.10, 0.25, 0.50, 0.75, 1.00)陶瓷样品，并对其铁电介电性能进行了测量。对Sr2Bi4Ti5O18样品介电性能的测量表明，分别在70 ℃、230 ℃和290 ℃附近存在介电损耗峰(P1, P2, P3)，其中P1、P2峰的峰高和峰均随频率变化，频率升高，峰温增加，具有介电弛豫特征，通过计算P1、P2损耗峰对应的激活能分别为2.62 eV、15.68 eV，结果表明P1、P2损耗峰不是由于氧空位的迁移引起的能量损耗峰。随着Dy含量的增加，样品的相变温度Tc降低，表明利用离子半径较小的Dy3+进行掺杂导致样品晶格畸变减小，从而可知A位掺杂离子半径对性能的影响不是主要方面。SBDT(x=0.25)样品的介电损耗-温度谱，在150 oC附近存在明显的弛豫损耗峰PI，其激活能为0.4 eV，可以确定该峰是氧空位引起的损耗峰。结果表明Dy掺杂使得氧空位浓度增加，氧空位的存在会导致很强的畴钉扎，使得可反转的畴的数目减少，从而剩余极化2Pr减小。 关键词： Sr2Bi4Ti5O18，介电性能，激活能，氧空位，晶格畸变 Abstract: Sr2Bi4-xDy xTi5O18 ferroelectric ceramic samples were prepared by traditional solid-state reaction method, and their ferroelectric and dielectric properties were measured. From the dielectric result of Sr2Bi4Ti5O18, three obvious peaks (P1, P2, P3) on the dielectric loss versus temperature curves were observed at 70 oC, 230 oC and 290 oC, respectively. The peak P1 and P2 is frequency dependent with the peak temperature moving toward higher direction with increasing frequency. The activation energy of loss peak was calculated by means of the peak shift method. The activation energy of the peak around 70 oC and 230 oC was equal to 2.62 eV, 15.68 eV, respectively. So their relaxation mechanism were not attributed to the migration of oxygen vacancy. It is found that with the increasing of Dy content the Curie temperature decreased. One obvious relaxation peak on the dielectric loss spectrum of Sr2Bi3.75Dy0.25Ti5O18 was observed at 140 oC, The activation energy of this peak was equal to 0.4eV. and its relaxation mechanism was attributed to the migration to oxygen vacancies. Therefore, Dy doping could increase the density of oxygen vacancies, which caused strong domain pinning, leads to a decline of polarization hysteresis loops and brings about a decrease in 2Pr. Keywords: Sr2Bi4Ti5O18, dielectric property, activation energy, oxygen vacancy, distortion 1 引 言 现在普遍使用的计算机存储设备有硬盘与内存等。内存读写速度快，存储量小，断电后数据即丢失，