离子束辅助沉积同质过渡层增强AlN薄膜择优取向研究.pdfVIP

O29 离子束辅助沉积同质过渡层增强 AlN 薄膜择优取向研究 李智，周灵平，朱家俊，彭坤，李德意 （湖南大学材料科学与工程学院，湖南长沙 410082 ，中国） 摘要：采用离子束辅助沉积技术（IBAD ）在金刚石等衬底上预沉积一层AlN 同质过渡层，然后利用脉冲反应磁控溅射在过 渡层上沉积 AlN 薄膜。结果表明，该同质过渡层明显增强了 AlN 薄膜的 c 轴取向度。在 XRD 图谱上，（002 ）峰衍射强度增 高，（ 100）、（101）等衍射峰消失。AlN 薄膜生长模式由于同质过渡层的引入发生变化，由三维岛状生长趋向于二维外延生 长，从而呈现 c 轴择优取向。 关键词：AlN 薄膜；择优取向；同质过渡层；离子束辅助沉积 中图分类号：O484.1 文献标识码：A Enhancement of preferential orientation of AlN thin films useing Homogeneous buffer layer by ion beam assisted deposition LI Zhi,ZHOU Ling-ping, ZHU Jia-jun, PENG Kun,Li De-yi (College of Materials Science and Engineering, Hunan University, Changsha Hunan 410082, China) Abstract: AlN homogeneous buffer layer was predeposition on diamond substrate by ion beam assisted deposition(IBAD) ,then AlN thin films was fabricated on the buffer layer by impulse reactive magnetron sputtering deposition.The results ind icates that the introduction of the buffer layer tend to improve the preferential orientation degree of A1N films.XRD spect ra shows that the intensity of AlN(002) becomes greater,and at the same time AlN(100) and AlN(101) disappear.The grow th mode of films make changes because of the introduction of the buffer layer,and it transforms from the 3D island growt h mode to the 2D layer growth mode with the c-axis preferential orientation. Keywords: AlN films; preferential orientation; homogeneous buffer layer; ion beam assisted deposition 作者简介：李智，男，硕士研究生，E-mail:lizhi_1234567@163.com 。 通讯作者：周灵平，男，教授，E—mail:lpzhou@ 1 引言 A1N 薄膜具有高的声波传播速度以及大的压电耦合系数而成为理想的压电材料，特别适合用于制作 GHz 频带的声表面波（SAW）器件和体波（BAW ）器件。由于AlN 薄膜 c 轴（002 ）取向的声表面波速率 202 为 11354m/s，大于 a 轴取向（100）的声表面波速率5500m/s[1]，并且前者的压电应力系数也