氮化镓粉末的溶胶凝胶法制备及其结构.pdfVIP

理化学学报(Wuli Huaxue Xuebao) June Acta Phys. Chim. Sin., 2006, 22(6) ：657 660 657 [Article] 氮化镓粉末的溶胶凝胶法制备及其结构 刘亦安 薛成山 庄惠照 张晓凯 田德恒 吴玉新 孙莉莉 艾玉杰 王福学 (山东师范大学 理与电子科学学院半导体研究所, 济南 250014) 摘要 报道了一种新颖而有效的二步制备氮化镓粉末的方法. 以乙氧基镓Ga(OC H ) 作前驱体, 利用溶胶鄄凝胶 2 5 3 法和高温氨化法相结合, 在950 益氨化温度下, 将凝胶与流动的NH3 反应20 min, 合成了GaN 粉末. XRD、FTIR 、 TEM 及SAED 的测量结果表明, GaN 粉末是六方纤锌矿结构的单 粒, 粉末粒度较均匀, FTIR 吸收谱有明显 的宽化现象. 关键词： 溶胶鄄凝胶法, 氨化温度, GaN 粉末 中图分类号： O648 Structure and Synthesis of GaN Powder by Sol Gel Method LIU, Yi鄄An XUE, Cheng鄄Shan ZHUANG, Hui鄄Zhao ZHANG, Xiao鄄Kai TIAN, De鄄Heng WU, Yu鄄Xin SUN, Li鄄Li AI, Yu鄄Jie WANG, Fu鄄Xue (Institute of Semiconductors, College of Physics and Electronics, Shandong Normal University, Jinan 250014, P. R. China) Abstract A novel and efficient method was applied to prepare gallium nitride (GaN) powder . Hexagonal gallium nitride(GaN) powder was successfully synthesized by means of a combination of sol鄄gel process with high temperature ammoniation using Ga(OC H ) as a precursor. Ammoniation of Ga O gel was conducted in the flow of NH gas at 950 2 5 3 2 3 3 益 for 20 min. Measurement results by XRD, FTIR, TEM, and SAED indicate that the synthesised GaN is of a single鄄 phase hexagonal wurtzite structure, and the granularity of th