钴硅化物薄膜快速淀积外延生长原子模型模拟.pdfVIP

Atomic Simulation of Cobalt Silicide Film Growth by Rapid ∗ Deposition Epitaxy † Hao Shi, Min Yu , Ru Huang, Xing Zhang Institute of Microelectronics, Peking University Peking, China, 100871 †E-mail ：yum@ Abstract The research of cobalt silicidation has attracted much attention for its potential applications in VLSI circuits as interconnects, contacts, etc. In this paper, we put forward a new process model for the growth of CoSi2 film by RDE (Rapid Deposition Epitaxy) experiment and develop a smart program to simulate the film growth. In our model, we use a two dimensional mesh structure to describe the silicon substrate. The mesh structure is made up of pa ths which can be defined as a series of vectors. The properties of the pa ths such as start point, current state, etc. are recorded so that the diffusion and reaction of the moving atoms can be conveniently simulated, making the detailed physical analysis possible. The movements of the atoms are restricted on pat hs, and the state of the pa ths will influence the movement of the atoms. Diffusion or reaction of the atoms will occur with a certain probability, depending on the two variables Rate_Diffusi on and Rate_Reaction which are defined in our model to describe the diffusion rate and reaction rate of the reacting atoms, respectively. The simulation results and the discussions are also presented ，which show that the CoSi2 growth by RDE is a diffusion-controlled process. Keywords: cobalt silicide, simulation, film growth 1. Introduction Cobalt silicide f