纳米氧化层对坡莫合金薄膜性能影响.pdfVIP

VACUUM ELECTRONICS 王东伟, 丁 雷, 王 乐, 滕 蛟, 于广华 ( , 100083) The Effects of NanoOxide Layers on the Performance of Permalloy Films WA N G Dongw ei, DIN G L ei, WA N G L e, T EN G Jiao, Y U Guanghua (D ep artment of M aterials Physics and Chemistry, School of M aterials Science and Engineering , Univers ity of Science and Technology Beij ing , Beij ing 100083, China) Abstract: T a/ N iF e/ T a ilms w ere prepared by means o magnet ron sput tering. We invest igat ed the e ects o N OL on t he per orm ance o N iFe ilm s by inser ting CoF eN OL and A l2 O3 ilm into N iF e ilms re spectively. T he ex perimental result s show t hat CoFeN OL has a signi icant in luence on magnetic proper t ies o N iF e ilm s. A nd t his e ect is sensit iv e to t he posit ion o CoFeN OL in t he ilms . When CoF eN OL w as insert ed int o t he T a/ N iF e int er ace, it w ould dest roy t he t ext ure o t he N iF e ilm, and lead t o t he de crease o anisot ropic magneto resist ance ( A M R) and t he enhancem ent o coerciv it y ( H c ) . H ow ever, w hen Co FeN OL w as insert ed int o t he N iFe/ T a inter ace, A M R and H c had lit t le change due to w it ho ut de 2 3 2 3 st royed t he tex ture o t he N iF e ilm . Ot herw ise, by insert ing A l O ilm int o N iF e ilms , A l O ilm o right t hickness could im pro ve t he t ex t ure, enhance A M R, and impr ove magnet ic proper ties o N iF e ilms due t o specular re lect ion o A l2 O3 ilm. When t he t hickness o A l2 O3 ilm w as 1. 5 nm , N iFe ilms ob t ained opt im um t ext ure and proper ties. Key words: N i81 F e19 ilm; A nisot ropic m ag net oresist ance; N a